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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3552
DESCRIPTION *High Breakdown Voltage *High Switching Speed *Wide Area of Safe Operation
APPLICATIONS *Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
B
Base Current- Continuous
6
A
PC
Collector Power Dissipation @ TC=25
150
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 5mA; RBE= IE= 1mA; IC= 0 IC= 1mA; IE= 0 IC= 6A; IB= 1.2A
B
2SC3552
MIN 800 7 1100
TYP.
MAX
UNIT V V V
2.0 1.5 10 10 10 8 215 15 40
V V A A
IC= 6A; IB= 1.2A
B
VCB= 800V ; IE= 0 VEB= 5V ; IC= 0 IC= 0.8A ; VCE= 5V IC= 4A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0MHz IC= 0.8A ; VCE= 10V
pF MHz
Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 8A , IB1= 1.6A; IB2= -3.2A RL= 500; VCC=400V 0.5 3.0 0.3 s s s
hFE-1 Classifications K 10-20 L 15-30 M 20-40
isc Websitewww.iscsemi.cn
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